- 您現在的位置：買賣IC網 > PDF目錄351880 > 2SC5777 5V Adjustable, 10W, CMOS, Step-Up, Switching Regulator Controller PDF資料下載
參數資料
| 型號： | 2SC5777 |
| 英文描述： | 5V Adjustable, 10W, CMOS, Step-Up, Switching Regulator Controller |
| 文件頁數： | 1/9頁 |
| 文件大小： | 63K |
| 代理商： | 2SC5777 |
NE662M16
NPN SILICON HIGH
FREQUENCY TRANSISTOR
M16
HIGH GAIN BANDWIDTH: fT = 25 GHz
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
NEW LOW PROFILE M16 PACKAGE:
Flat Lead Style with a height of just 0.50mm
FEATURES
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
PART NUMBER
NE662M16
EIAJ1 REGISTERED NUMBER
2SC5704
PACKAGE OUTLINE
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
200
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
200
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
50
70
100
fT
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
GHz
20
25
MSG
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
20
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
14
17
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
dB
1.1
1.5
P1dB
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
dBm
11
IP3
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
22
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
pF
0.14
0.24
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG =
DC
RF
S21
S12
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5786(NE894M03) | Discrete |
| 2SC5787 | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5787(NE894M13) | Discrete |
| 2SC644 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SC693 | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
| 2SC5784(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A TSM |
| 2SC5785(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 10V 2A hfe1000 25ns PW-M |
| 2SC57880PA | 功能描述:TRANS NPN PWR AMP 60VCEO 3A MT-4 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
發布緊急采購，3分鐘左右您將得到回復。