- 您現在的位置：買賣IC網 > PDF目錄371519 > 2SC5813 (PANASONIC CORP) Silicon NPN epitaxial planar type PDF資料下載
參數資料
| 型號： | 2SC5813 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | 2SC5813 |
Transistors
2SC5813
Silicon NPN epitaxial planar type
1
Publication date: December 2002
SJC00285BED
For DC-DC converter
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
80
V
Collector-emitter voltage (Base open)
V
CEO
80
V
Emitter-base voltage (Collector open)
V
EBO
I
C
5
V
Collector current
1.5
A
Peak collector current
I
CP
3
A
Collector power dissipation
*
P
C
T
j
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
40 V, I
E
=
0
V
CE
=
2 V, I
C
=
100 mA
I
C
=
1 A, I
B
=
20
mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
80
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
80
V
Emitter-base voltage (Collector open)
5
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
μ
A
Forward current transfer ratio
*
h
FE
200
Collector-emitter saturation voltage
*
V
CE(sat)
350
500
mV
Transition frequency
f
T
C
ob
180
MHz
Collector output capacitance
(Common base, input open circuited)
15
25
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
Unit: mm
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 5H
Note)*: Measure on the ceramic substrate at 15 mm
×
15 mm
×
0.6 mm
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5819 | High-Speed Switching Applications DC-DC Converter Applications |
| 2SC5829 | For High Speed Switching |
| 2SC5838 | Silicon NPN epitaxial planar type |
| 2SC5839 | Silicon NPN epitaxial planar type |
| 2SC5840 | CON/ 20M HRC SO T S |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC581300L | 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5819(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62 |
| 2SC582 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5823-TL-E | 制造商:SANYO 功能描述:NPN 400V 1.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 400V 1.5A TO-251 制造商:Sanyo 功能描述:0 |
| 2SC5824T100Q | 功能描述:兩極晶體管 - BJT NPN 60V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。