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參數資料
| 型號： | 2SC5862 |
| 文件頁數： | 1/24頁 |
| 文件大小： | 104K |
| 代理商： | 2SC5862 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15660EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
Low phase distortion, low voltage operation
Ideal for OSC applications
Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5800
50 pcs (Non reel)
8 mm wide embossed taping
2SC5800-T1
3 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
5.5
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
200
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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| 2SC5865TLR | 功能描述:兩極晶體管 - BJT NPN 60V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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