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參數(shù)資料
型號(hào): 2SC5902
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion mesa type
中文描述: 9 A, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, SC-94, TOP-3E-A1, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 78K
代理商: 2SC5902
Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
1
Publication date: March 2004
SJD00304AED
Horizontal deflection output for TV
Features
High breakdown voltage: V
CBO
1
700 V
Wide safe operation area
Built-in dumper diode
Absolute Maximum Ratings
T
C
=
25
°
C
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Emitter-base voltage (Collector open)
V
EBO
I
E
=
500 mA, I
C
=
0
I
F
=
4.5 A
V
CB
=
1
000 V, I
E
=
0
V
CB
=
1
700 V, I
E
=
0
V
CE
=
5 V, I
C
=
4.5 A
I
C
=
4.5 A, I
B
=
1.13 A
I
C
=
4.5 A, I
B
=
1.13 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
4.5 A, Resistance loaded
I
B1
=
1.13 A, I
B2
=
2.25 A
7
V
Forward voltage
V
F
2
V
Collector-base cutoff current (Emitter open)
I
CBO
50
μ
A
1
mA
Forward current transfer ratio
h
FE
5
10
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
3
V
Base-emitter saturation voltage
1.5
V
Transition frequency
f
T
3
MHz
Storage time
t
stg
t
f
5.0
μ
s
μ
s
Fall time
0.5
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
1
700
V
Collector-emitter voltage (E-B short)
V
CES
1
700
V
Emitter-base voltage (Collector open)
V
EBO
I
B
7
V
Base current
3
A
Collector current
I
C
9
A
Peak collector current
*
I
CP
P
C
14
A
Collector power dissipation
40
W
T
a
=
25
°
C
3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
15.5
±
0.5
3.0
±
0.3
5
(4.0)
2.0
±
0.2
1.1
±
0.1
5.45
±
0.3
0.7
±
0.1
5
5
5
5
10.9
±
0.5
1
5
2
3
(
(
(
S
3
±
0
5
±
0
(
2
±
0
(
2
±
0
1
±
0
(
φ
3.2
±
0.1
(
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Note)*: Non-repetitive peak collector current
Internal Connection
B
C
E
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