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參數(shù)資料
| 型號： | 2SC5967 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PBL, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 29K |
| 代理商： | 2SC5967 |
2SC5967
No.7614-1/4
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High-speed.
High breakdown voltage (VCBO=1700V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1700
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
20
A
Collector Current (Pulse)
ICP
40
A
Collector Dissipation
PC
3.5
W
Tc=25
°C180
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
ICES
VCE=1700V, RBE=0
1.0
mA
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, RBE=∞
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1.0
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7614
2SC5967
Package Dimensions
unit : mm
2048B
[2SC5967]
31504KD TS IM TA-100728
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
20.0
1.2
2.0
3.4
3.3
0.6
5.0
1.0
2.0
20.7
26.0
12
3
5.45
2.8
6.0
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