- 您現在的位置：買賣IC網 > PDF目錄369124 > 2SC6024 (Sanyo Electric Co.,Ltd.) UHF to C Band Low-Noise Amplifier and OSC Applications PDF資料下載
參數資料
| 型號： | 2SC6024 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | UHF to C Band Low-Noise Amplifier and OSC Applications |
| 中文描述： | 超高頻的C波段低噪聲放大器和OSC應用 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 54K |
| 代理商： | 2SC6024 |
2SC6024
No.8290-1/15
Features
Low-noise use
High cut-off frequency: fT=14GHz typ (VCE=1V).
: fT=21GHz typ (VCE=3V).
Low operating voltage.
High gain
:
S21e
2
=12.5dB typ (f=2GHz).
Ultraminiature and thin flat leadless package (1.4mm
0.8mm
0.6mm).
: NF=1.2dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
9
3.5
2
35
120
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e
S21e
NF
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=3V, IC=15mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=15mA, f=2GHz
VCE=1V, IC=5mA, f=2GHz
1.0
μ
A
μ
A
1
80
160
Gain-Bandwidth Product
14
21
0.5
0.3
10.5
12.5
1.2
GHz
GHz
pF
pF
dB
dB
dB
18
Output Capacitance
Reverse Transfer Capacitance
0.7
Forward Transfer Gain
2
1
9
2
2
Noise Figure
Marking : NM
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005AB MS IM TB-00000446
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6024
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
Ordering number : ENN8290
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC603 | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC681 | POWER TRANSISTOR(6A,50W) |
| 2SC681ARD | POWER TRANSISTOR(6A,50W) |
| 2SC681AYL | POWER TRANSISTOR(6A,50W) |
| 2SC693F | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-106VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC6024-TL-E | 功能描述:TRANS NPN 3.5V 35MA 3SSFP RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC6025 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6026 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
| 2SC6026CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General Purpose Amplifier Applications |
| 2SC6026CT-GR | 功能描述:兩極晶體管 - BJT 100mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。