- 您現在的位置：買賣IC網 > PDF目錄33420 > 2SC6060 1 A, 230 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC6060 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 230 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10U1A, SC-67, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 175K |
| 代理商： | 2SC6060 |
2SC6060
2006-11-13
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6060
Power Amplifier Applications
Driver Stage Amplifier Applications
·
High-transition frequency: fT = 100 MHz (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
DC
IC
1.0
A
Collector current
pulse
ICP
2.0
A
Base current
IB
100
mA
Ta
= 25°C
2
W
Collector power dissipation
Tc
= 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
1 : BASE
2 : COLLECTOR
3 : EMITTER
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC6062 | 5000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6072 | 2 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 2SC6076 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6077 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6084 | 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC6060(Q) | 功能描述:兩極晶體管 - BJT NPN 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6060(STA4,Q) | 功能描述:兩極晶體管 - BJT NPN 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6061 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type |
| 2SC6061(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 120V 1A TSM 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 120V 1A hfe120-300 0.2us |
| 2SC6062(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SILICON NPN EPITAXIAL TYPE |
發布緊急采購，3分鐘左右您將得到回復。