- 您現在的位置：買賣IC網 > PDF目錄49963 > 2SC6079 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC6079 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 215K |
| 代理商： | 2SC6079 |
2SC6079
2007-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications
Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A）
High-speed switching: tstg = 0.4 s (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEX
160
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
9
V
DC
IC
2.0
A
Collector current
Pulse
ICP
4.0
A
Base current
IB
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55～150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight:0.2g(typ)
1 : BASE
2 : COLLECTOR
3 : EMITTER
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC6081 | 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6081 | 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6083A | 1000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6087 | 2.5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6090LS | 10 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC6080 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching |
| 2SC6081 | 功能描述:TRANS NPN 50V 5A TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC6082 | 功能描述:兩極晶體管 - BJT BIP NPN 15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6082-1E | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / BIP NPN 15A 50V |
| 2SC6082-1EX | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V |
發布緊急采購，3分鐘左右您將得到回復。