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參數(shù)資料
| 型號(hào)： | 2SC6097-TL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 41K |
| 代理商： | 2SC6097-TL |
2SC6097
No. A0412-1/4
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
100
V
Collector-to-Emitter Voltage
VCES
100
V
Collector-to-Emitter Voltage
VCEO
60
V
Emitter-to-Base Voltage
VEBO
6.5
V
Collector Current
IC
3A
Collector Current (Pulse)
ICP
5A
Base Current
IB
600
mA
Collector Dissipation
PC
0.8
W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=50V, IE=0A
1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
1
A
DC Current Gain
hFE
VCE=2V, IC=100mA
300
600
Continued on next page.
Ordering number : ENA0412
70306 / 53006EA MS IM TB-00002348
2SC6097
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6097-TL-E | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6098 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC6098-E | 功能描述:兩極晶體管 - BJT BIP NPN 2.5A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6098-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 2.5A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6099 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
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