- 您現在的位置：買賣IC網 > PDF目錄55791 > 2SC6140 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC6140 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, 2-10T1A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 186K |
| 代理商： | 2SC6140 |
2SC6140
2009-10-15
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6140
○
Audio Frequency Amplifier Applications
High collector voltage
: VCEO = 160 V
Small collector output capacitance
: Cob = 12pF (typ.)
High transition frequency
: fT = 100MHz (typ.)
Complementary to 2SA2220
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
6
V
DC
IC
1.5
A
Collector current
Pulse
ICP
2.5
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
単位
: mm
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC6145AO | 15 A, 260 V, NPN, Si, POWER TRANSISTOR |
| 2SC643A | 2.5 A, 1500 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2SC941TM-R | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC941TM-O | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC994 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC6141 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:230V / 15A, AF100W Output Applications |
| 2SC6142 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Voltage Switching Applications |
| 2SC6142(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC6144 | 功能描述:TRANS NPN BIPO 10A 50V TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:* 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC6144SG | 功能描述:兩極晶體管 - BJT BIP NPN 10A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。