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參數資料
| 型號： | 2SCR522MT2L |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | VMT3, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 166K |
| 代理商： | 2SCR522MT2L |
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2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
General purpose transistor(20V,0.2A)
2SCR522M / 2SCR522EB / 2SCR522UB
Structure
Dimensions (Unit : mm)
NPN silicon epitaxial planar transistor
Features
Complements the 2SAR522M / 2SAR522EB / 2SAR522UB.
Applications
Switch, LED driver
Packaging specifications
Packaging Type
Code
Taping
Basic ordering
unit (pieces)
T2L
8000
Taping
TL
3000
Taping
TL
3000
2SCR522M
2SCR522EB
2SCR522UB
Package
VMT3
EMT3F
UMT3F
Type
Absolute maximum ratings (Ta=25
C)
Inner circuit
Symbol
Limits
Unit
VCBO
20
V
20
V
VCEO
VEBO
5
mA
400
IC
ICP
mA
200
Tj
150
°C
Tstg
55 to +150
°C
PD
200
150
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Range of storage temperature
Power
dissipation
1 Pw=1mS Single pulse
2 Each terminal mounted on a recommended land
Parameter
2SCR522M,2SCR522EB
2SCR522UB
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
20
5
400
0.12
2
0.1
0.30
V
μA
V
MHz
pF
IC
=50μA
IC
=1mA
IE
=50μA
VCB
=20V
VEB
=5V
IC
=100mA, IB=10mA
hFE
120
560
VCE
=10V, IE=10mA, f=100MHz
VCE
=2V, IC=1mA
VCB
=10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
VMT3
EMT3F
(1)
(2)
(3)
UMT3F
2.0
0.32
0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
Abbreviated symbol : NC
(1)
(3)
(2)
(1) Base
(2) Emitter
(3) Collector
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SCR522UB | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor(20V,0.2A) |
| 2SCR522UBTL | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 20V 0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SCR523EB | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor(50V,0.1A) |
| 2SCR523EBTL | 制造商:ROHM Semiconductor 功能描述: |
| 2SCR523M | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor(50V,0.1A) |
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