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參數資料
| 型號： | 2SD0592A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Low-Frequency Output Amplification |
| 中文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 78K |
| 代理商： | 2SD0592A |
Transistors
2SD0592A
(2SD592A)
Silicon NPN epitaxial planar type
1
Publication date: January 2003
SJC00189CED
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■
Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
60
V
Collector-emitter voltage (Base open)
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
I
CP
1
A
Peak collector current
1.5
A
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
50
V
Emitter-base voltage (Collector open)
5
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE1
*
h
FE2
0.1
μ
A
Forward current transfer ratio
85
340
50
Collector-emitter saturation voltage
V
CE(sat)
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
0.85
1.20
V
Transition frequency
200
MHz
Collector output capacitance
(Common base, input open circuited)
20
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
Note) The part number in the parenthesis shows conventional part number.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD592A | For Low-Frequency Output Amplification |
| 2SD0601A | Silicon NPN epitaxial planer type |
| 2SD0601 | Silicon NPN epitaxial planer type |
| 2SD0602 | Silicon NPN epitaxial planer type |
| 2SD0602A | Silicon NPN epitaxial planer type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD0592A(2SD592A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0592AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD0592AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD0592ARA | 功能描述:TRANS NPN 50VCEO 1A TO-92 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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