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參數(shù)資料
| 型號(hào)： | 2SD0592AR |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 239K |
| 代理商： | 2SD0592AR |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
1
Publication date: January 2003
SJC00189CED
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■ Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 500 mA
85
340
hFE2
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat)
IC
= 500 mA, I
B
= 50 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85
1.20
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
20
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Note) The part number in the parenthesis shows conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD0592AS | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD592AR | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD0592S | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD592Q | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD0602A-Q | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0592ARA | 功能描述:TRANS NPN 50VCEO 1A TO-92 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SD0592AS | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD0592Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD0592R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD0592S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
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