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參數資料
| 型號： | 2SD0661T |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-71, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 592K |
| 代理商： | 2SD0661T |
551
Transistor
2SD
Type
2SD0661, 2SD0661A (2SD661, 2SD661A)
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
■ Features
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9±0.1
0.55±0.1
0.45±0.05
1.0
±
0.1
1.0
2.5±0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
±
0.1
2.0
±
0.2
2.4
±
0.2
1.25
±
0.05
4.1
±
0.2
4.5
±
0.1
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
35
55
35
55
7
200
100
400
150
–55 ~ +150
Unit
V
mA
mW
C
2SD0661
2SD0661A
2SD0661
2SD0661A
■ Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10A, IE = 0
IC = 2mA, IB = 0
IE = 10A, IC = 0
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
35
55
35
55
7
210
typ
200
max
0.1
1
650
1
150
Unit
A
V
MHz
mV
*h
FE Rank classification
Rank
R
S
T
hFE
210 ~ 340
290 ~ 460
360 ~ 650
2SD0661
2SD0661A
2SD0661
2SD0661A
Note.) The Part numbers in the Parenthesis show conventional
part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD661T | 100 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD0661AR | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD0661A | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD661AT | 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD0874G | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD0662 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For High Breakdown Voltage General Amplification |
| 2SD0662(2SD662) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0662/2SD0662B(2SD662/2SD662B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD0662. 2SD0662B (2SD662. 2SD662B) - NPN Transistor |
| 2SD0662B | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For High Breakdown Voltage General Amplification |
| 2SD0662B(2SD662B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
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