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參數資料
| 型號： | 2SD0814 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.01UF +/-10% 80V AXI |
| 中文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | SC-59, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SD0814 |
1
Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
I
Features
G
High collector to emitter voltage V
CEO
.
G
Low noise voltage NV.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
150
185
150
185
5
100
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD814
2SD814A
2SD814
2SD814A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
150
185
5
90
typ
150
2.3
150
max
1
330
1
Unit
μ
A
V
V
V
MHz
pF
mV
2SD814
2SD814A
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
90 ~ 155
130 ~ 220
185 ~ 330
2SD814
PQ
PR
PS
2SD814A
LQ
LR
LS
Marking symbol :
P
(2SD814)
L
(2SD814A)
Marking
Symbol
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
| 2SD814A | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
| 2SD0874 | Silicon NPN epitaxial planar type |
| 2SD0874A | Silicon NPN epitaxial planar type |
| 2SD0875 | For Low-Frequency Power Amplification |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD0814/2SD0814A(2SD814/2SD814A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD0814. 2SD0814A (2SD814. 2SD814A) - NPN Transistor |
| 2SD0814A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For High Breakdown Voltage Low-Frequency And Low-Noise |
| 2SD0814A(2SD814A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0814AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 |
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