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參數(shù)資料
| 型號： | 2SD0814AR |
| 英文描述： | TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 |
| 中文描述： | 晶體管|晶體管|叩| 185V五（巴西）總裁| 50mA的一（c）|的SOT - 346 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | 2SD0814AR |
Transistors
1
Publication date: January 2003
SJC00196CED
2SD0814A (2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
185
V
Collector-emitter voltage (Base open)
VCEO
185
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
185
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 01
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 10 mA
90
330
Collector-emitter saturation voltage
VCE(sat)
IC
= 30 mA, I
B
= 3 mA
1
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.3
pF
(Common base, input open circuited)
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 k, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank
Q
R
S
hFE
90 to 155
130 to 220
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Marking Symbol L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0814ARL | 功能描述:TRANS NPN 185VCEO 50MA MINI-3P RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD0814AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 |
| 2SD0814ASL | 功能描述:TRANS NPN 185VCEO 50MA MINI-3P RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD0814Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346 |
| 2SD0814R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346 |
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