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參數資料
| 型號： | 2SD0814R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | SC-59, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 171K |
| 代理商： | 2SD0814R |
556
Transistor
2SD0814, 2SD0814A (2SD814, 2SD814A)
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
s Features
q
High collector to emitter voltage VCEO.
q
Low noise voltage NV.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–59
3:Collector
Mini3-G1 Package
0.40
+0.10
0.05
(0.65)
1.50
+0.25 -0.05
2.8
+0.2 -0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
-0.05
0.16
+0.10
-0.06
0.4
±0.2
5
°
10
°
0
to
0.1
1.1
+0.2 -0.1
1.1
+0.3 -0.1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
185
150
185
5
100
50
200
150
–55 ~ +150
Unit
V
mA
mW
C
2SD0814
2SD0814A
2SD0814
2SD0814A
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
ICBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
NV
Conditions
VCB = 100V, IE = 0
IC = 100A, IB = 0
IE = 10A, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
150
185
5
90
typ
150
2.3
150
max
1
330
1
Unit
A
V
MHz
pF
mV
2SD0814
2SD0814A
*h
FE Rank classification
Rank
Q
R
S
hFE
90 ~ 155
130 ~ 220
185 ~ 330
2SD0814
PQ
PR
PS
2SD0814A
LQ
LR
LS
Marking symbol :
P(2SD0814)
L(2SD0814A)
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD0814S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346 |
| 2SD0874 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| 2SD0874(2SD874) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0874/2SD0874A(2SD874/2SD874A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD0874. 2SD0874A (2SD874. 2SD874A) - NPN Transistor |
| 2SD08740RL | 功能描述:TRANS NPN 25VCEO 1A MINI-PWR RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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