- 您現在的位置：買賣IC網 > PDF目錄49964 > 2SD0874GQ (PANASONIC CORP) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SD0874GQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F2, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 210K |
| 代理商： | 2SD0874GQ |
Transistors
1
Publication date: September 2007
SJD00336AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0874G
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766G
■ Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 060
V
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE
= 10 V, I
C
= 500 mA
85
340
hFE2
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
Base-emitter saturation voltage *
1
VBE(sat)
IC
= 500 mA, I
B
= 50 mA
0.85
1.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: Y
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD0874GS | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD0958R | 20 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1001EL | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1001EM | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1005BV | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD0874GRL | 功能描述:TRANS NPN 50VCEO 1A MINI-PWR RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD0874Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD0874R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD0874S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD0875 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Low-Frequency Power Amplification |
發布緊急采購，3分鐘左右您將得到回復。