- 您現在的位置：買賣IC網 > PDF目錄33352 > 2SD1047E 12 A, 140 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SD1047E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-3PB, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 85K |
| 代理商： | 2SD1047E |
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/5
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
6
1
)
—
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
4
1
)
—
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
—
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
2
1
)
—
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
5
1
)
—
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
0
4
—
Specifications
Absolute Maximum Ratings at Ta = 25C
Features
Capable of being mounted easily because of one-point fixing type plastic molded package
(Interchangeable with TO-3).
Wide ASO because of on-chip ballast resistance.
Good depenedence of fT on current and excellent high frequency responce.
The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to
the 2SB817 and 2SD1047.
C
Electrical Characteristics at Ta = 25C
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
8
)
—
(
=
E 0
=1
.
0
)
—
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
—
(
=
C 0
=1
.
0
)
—
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
5
)
—
(
=
C
A
1
)
—
(
=*
0
6*
0
2
h E
F 2V E
C
I
,
V
5
)
—
(
=
C
A
6
)
—
(
=0
2
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
)
—
(
=
C
A
1
)
—
(
=5
1z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
)
—
(
=
)
0
3
(F
p
0
1
2F
p
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
Continued on next page.
k
n
a
RD
E
h E
F
0
2
1
o
t
0
60
0
2
o
t
0
1
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Ordering number : ENN680F
2SB817/2SD1047
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
140V/12A AF 60W Output Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1047D | 12 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SB817PE | 12 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 2SB824L-Q-T60-K | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB824G-R-T60-K | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB824L-R-AB3-R | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1047-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN TO-3PB |
| 2SD1047F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | SOT-186VAR |
| 2SD1047P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SD1047PD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD1047PE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-247VAR |
發布緊急采購，3分鐘左右您將得到回復。