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參數資料
| 型號： | 2SD1220-R(2-7B1A) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 151K |
| 代理商： | 2SD1220-R(2-7B1A) |
2SD1220
2006-11-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1220
Power Amplifier Applications
Complementary to 2SB905
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
1.5
A
Base current
IB
1.0
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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| 2SD1221-Y | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1220Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA |
| 2SD1221 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-6460V 3A 20W BCE |
| 2SD1221_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SD1221GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 |
| 2SD1221-GR(Q) | 制造商:Toshiba 功能描述:Trans GP BJT NPN 60V 3A 3-Pin (2+Tab) PW-Mold |
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