- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371523 > 2SD1251A (PANASONIC CORP) Silicon NPN triple diffusion junction type(For power amplification) PDF資料下載
參數(shù)資料
| 型號： | 2SD1251A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion junction type(For power amplification) |
| 中文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N TYPE PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 50K |
| 代理商： | 2SD1251A |
1
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
I
Features
G
Wide area of safe operation (ASO)
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
60
80
60
80
8
6
4
1
30
1.3
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
2SD1251
2SD1251A
2SD1251
2SD1251A
T
C
=25
°
C
Ta=25
°
C
Note: Ordering can be made by the common rank (OP rank h
FE2
= 50 to 160) in the rank classification.
*1
h
FE2
Rank classification
Rank
Q
P
O
h
FE2
30 to 60
50 to 100
80 to 160
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CEO(sus)*2
h
FE1
h
FE2*1
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 20V, I
E
= 0
V
EB
= 8V, I
C
= 0
I
C
= 0.2A, L = 25mH
V
CE
= 3V, I
C
= 0.1A
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 1A
I
C
= 2A, I
B
= 0.4A
V
CE
= 10V, I
C
= 0.2A, f = 0.5MHz
min
60
80
40
30
typ
1
max
30
1
160
1.2
1
Unit
μ
A
mA
V
V
V
MHz
2SD1251
2SD1251A
*2
V
CEO(sus)
Test circuit
50/60Hz mercury relay
X
I
C
(A)
0.2
0.1
60/80
V
CE
(V)
L 25mH
15V
1
Y
G
6V
120
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1252 | Silicon NPN triple diffusion planar type(For power amplification) |
| 2SD1253 | Silicon NPN triple diffusion planar type(For power amplification) |
| 2SD1256 | Silicon NPN epitaxial planar type(For power switching) |
| 2SD1257 | Silicon NPN epitaxial planar type(For power switching) |
| 2SD1257A | Silicon NPN epitaxial planar type(For power switching) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1251AO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1251AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1251AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1251O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1251P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。