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參數資料
| 型號： | 2SD1270PQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 74K |
| 代理商： | 2SD1270PQ |
1
Power Transistors
2SD1270
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB0945 (2SB945)
I Features
G
Low collector to emitter saturation voltage VCE(sat)
G
Satisfactory linearity of foward current transfer ratio hFE
G
Large collector current IC
G
Full-pack package which can be installed to the heat sink with
one screw
I Absolute Maximum Ratings (T
C=25C)
I Electrical Characteristics (T
C=25C)
*h
FE2 Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±
0.2
φ3.1±0.1
Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
IC = 4A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V
min
80
45
60
typ
30
0.5
1.5
0.15
max
10
50
260
0.5
1.5
Unit
A
V
MHz
s
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
130
80
7
10
5
40
2
150
–55 to +150
Unit
V
A
W
C
TC=25
°C
Ta=25
°C
Note.) The Part number in the Parenthesis shows conventional part number.
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| 2SD1273AO | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
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| 2SD1276Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1270Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | SOT-186 |
| 2SD1270R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | SOT-186 |
| 2SD1271 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1271/2SD1271A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1271. 2SD1271A - NPN Transistor |
| 2SD12710P | 功能描述:TRANS NPN 80VCEO 7A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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