- 您現在的位置：買賣IC網 > PDF目錄371523 > 2SD1274B (PANASONIC CORP) Silicon NPN triple diffusion planar type(For power amplification) PDF資料下載
參數資料
| 型號： | 2SD1274B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power amplification) |
| 中文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SD1274B |
1
Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
I
Features
G
High collector to base voltage V
CBO
G
High-speed switching
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
150
200
250
150
200
250
80
6
5
40
2
150
–55 to +150
Unit
V
V
V
V
A
W
C
C
2SD1274
2SD1274A
2SD1274B
2SD1274
2SD1274A
2SD1274B
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
Symbol
I
CBO
V
CEO(sus)*
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
t
f
Conditions
V
CB
= 150V, I
E
= 0
V
CB
= 200V, I
E
= 0
V
CB
= 250V, I
E
= 0
I
C
= 0.2A, L = 25mH
I
E
= 1mA, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 5A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.8A, V
EB
= –5V
min
80
6
14
typ
40
max
1
1
1
1.5
1.6
1
Unit
mA
V
V
V
V
MHz
μ
s
2SD1274
2SD1274A
2SD1274B
*
V
CEO(sus)
Test circuit
X
L 25mH
15V
1
Y
G
6V
120
60Hz
I
C
(A)
0.2
0.1
80
V
CE
(V)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1275 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD1275A | Silicon PNP epitaxial planar type Darlington |
| 2SD1276 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD1276A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1279 | SILICON NPN TRIPLE DIFFUSED MESA TYPE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1274C | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1275 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington |
| 2SD1275/2SD1275A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1275. 2SD1275A - NPN Transistor Darlington |
| 2SD12750P | 功能描述:TRANS NPN 60VCEO 2A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1275A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA 80V 2A 2W BCE |
發布緊急采購，3分鐘左右您將得到回復。