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參數資料
型號: 2SD1295
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planar type(For low-frequency output amplification)
中文描述: 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, U-G2, SC-63, 3 PIN
文件頁數: 1/3頁
文件大小: 53K
代理商: 2SD1295
1
Power Transistors
2SB968
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
I
Features
G
Possible to solder the radiation fin directly to printed cicuit board
G
High collector to emitter V
CEO
G
Large collector power dissipation P
C
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25
°
C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–50
–40
–5
–3
–1.5
20
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
I
C
= –1.5A, I
B
= – 0.15A
I
C
= –2A, I
B
= – 0.2A
V
CB
= –5V, I
E
= 0.5A, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–50
–40
50
typ
150
45
max
–1
–100
–10
220
–1
–1.5
Unit
μ
A
μ
A
μ
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
50 to 100
80 to 160
120 to 220
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
4.6
±
0.1
2.3
±
0.1
0.75
±
0.1
1
2
3
0.93
±
0.1
2
±
0
0
1
±
0
7
±
0
1
±
0
2.3
±
0.1
0.5
±
0.1
0.5
±
0.1
0.1
±
0.05
1.0
±
0.1
6.5
±
0.2
5.35
4.35
2.3
1
±
0
2
±
0
5
±
0
6
1
0.75
0.6
3
2.3
2
1
0.5
±
0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Unit: mm
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