- 您現在的位置：買賣IC網 > PDF目錄369140 > 2SD1302S TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 PDF資料下載
參數資料
| 型號： | 2SD1302S |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 51K |
| 代理商： | 2SD1302S |
1
Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Low ON resistance R
on
.
G
High foward current transfer ratio h
FE
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
200
60
typ
0.13
200
10
1.0
max
100
800
0.4
1.2
Unit
nA
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE1
200 ~ 350
300 ~ 500
400 ~ 800
*2
Pulse measurement
*3
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
= V
1000(
)
A
–V
B
f=1kHz
V=0.3V
1k
V
A
V
V
V
B
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1302T | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1306D | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1306E | BJT |
| 2SD1315 | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1315P | TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 5A I(C) | SOT-186 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1302STTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1303 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5120V 1A 1W ECB |
| 2SD1306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1306NE-TL | 制造商:Renesas Electronics Corporation 功能描述:TRANS GP BJT NPN 15V 0.7A 3PIN MPAK - Tape and Reel |
| 2SD1306NE-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。