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參數(shù)資料
| 型號(hào)： | 2SD1350 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type |
| 中文描述： | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 39K |
| 代理商： | 2SD1350 |
1
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
I
Features
G
High collector to base voltage V
CBO
.
G
High collector to emitter voltage V
CEO
.
G
Large collector power dissipation P
C
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
400
600
400
500
5
1
500
1
150
–55 ~ +150
Unit
V
V
V
A
mA
W
C
C
2SD1350
2SD1350A
2SD1350
2SD1350A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Fall time
Storage time
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
f
t
stg
Conditions
I
C
= 100
μ
A, I
E
= 0
I
C
= 500
μ
A, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 250mA, I
B
= 50mA
*
I
C
= 250mA, I
B
= 50mA
*
V
CB
= 30V, I
E
= –20mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
min
400
600
400
500
5
30
typ
55
0.4
1.0
0.7
1.0
3.6
4.0
max
1.5
1.5
7
Unit
V
V
V
V
V
MHz
pF
μ
s
μ
s
μ
s
*
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
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