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參數(shù)資料
| 型號： | 2SD1402 |
| 英文描述： | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 中文描述： | 晶體管|晶體管|叩| 800V的五（巴西）總裁| 5A條一（c）|至218VAR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 63K |
| 代理商： | 2SD1402 |
1
Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
I
Features
G
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 20000.
G
A shunt resistor is omitted from the driver.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
750
500
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD1478
2SD1478A
2SD1478
2SD1478A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
200
max
100
100
20000
2.5
3.0
Unit
nA
nA
V
V
V
V
V
MHz
*2
Pulse measurement
2SD1478
2SD1478A
2SD1478
2SD1478A
Unit: mm
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Marking symbol :
2N
(2SD1478)
2O
(2SD1478A)
Internal Connection
B
C
E
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
4000 ~ 10000 8000 ~ 20000
2SD1478
2NQ
2NR
2SD1478A
2OQ
2OR
Marking
Symbol
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1403 | TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-218VAR |
| 2SD1405 | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1406 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD1407 | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1407A | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1404 | 制造商:Toshiba America Electronic Components 功能描述:2SD1404 |
| 2SD1406 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1407A-O(F) | 功能描述:兩極晶體管 - BJT NPN 100V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1407A-Y(F) | 功能描述:兩極晶體管 - BJT NPN 100V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1407A-YF | 制造商:Toshiba America Electronic Components 功能描述:NPN TRIPLE DIFFUSED TYPE |
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