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參數資料
| 型號： | 2SD1418DA |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 45K |
| 代理商： | 2SD1418DA |
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1418DC | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1419DETR | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1419DEUL | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1419DDUR | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1419DEUR | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1418DB(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) UPAK T/R |
| 2SD1418DBTR | 制造商:HITACHI 功能描述: |
| 2SD1418DBTR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) UPAK T/R |
| 2SD1423 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1423A | 功能描述:TRANS NPN AF AMP 50V 500MA NEW S RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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