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參數資料
型號: 2SD1475R
英文描述: TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁| 4A條一(c)|的SOT - 186
文件頁數: 1/3頁
文件大小: 63K
代理商: 2SD1475R
1
Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
I
Features
G
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 20000.
G
A shunt resistor is omitted from the driver.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
750
500
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD1478
2SD1478A
2SD1478
2SD1478A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
200
max
100
100
20000
2.5
3.0
Unit
nA
nA
V
V
V
V
V
MHz
*2
Pulse measurement
2SD1478
2SD1478A
2SD1478
2SD1478A
Unit: mm
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
1
+
0
0.4
±
0.2
0
0
+
1
0.1 to 0.3
2
+
Marking symbol :
2N
(2SD1478)
2O
(2SD1478A)
Internal Connection
B
C
E
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
4000 ~ 10000 8000 ~ 20000
2SD1478
2NQ
2NR
2SD1478A
2OQ
2OR
Marking
Symbol
相關PDF資料
PDF描述
2SD1478 Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
2SD1478A Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
2SD1478AQ TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 200MA I(C) | TO-236AB
2SD1478AR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
2SD1478Q TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 200MA I(C) | TO-236AB
相關代理商/技術參數
參數描述
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2SD1478ARL 功能描述:TRANS NPN 50VCEO 50MA MINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
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