- 您現在的位置：買賣IC網 > PDF目錄49975 > 2SD1615AGP 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SD1615AGP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, PLASTIC, SC-62, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 92K |
| 代理商： | 2SD1615AGP |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON TRANSISTOR
2SD1615, 1615A
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. D10198EJ5V0DS00 (5th edition)
Date Published March 2006 NS CP(K)
Printed in Japan
c
1985
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid
Integrated Circuits.
FEATURES
Low VCE (sat) VCE(sat) = 0.15 V
Complement to 2SB1115, 1115A
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
2SD1615 2SD1615A
Collector to Base Voltage
VCBO
60
120
V
Collector to Emitter Voltage
VCEO
50
60
V
A
Emitter to Base Voltage
VEBO
6.0
Collector Current (DC)
IC (DC)
1.0
Collector Current (Pulse)
IC (Pulse)
2.0
Total Power Dissipation
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
PW ≤ 10 ms, Duty Cycle ≤ 50%
When mounted on ceramic substrate of 16 cm2 × 0.7 mm
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
100
nA
2SD1615
VCB = 60 V, IE = 0
100
nA
2SD1615A
VCB = 120 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 6.0 V, IC = 0
DC Current Gain
hFE1
135
290
600
2SC1615
VCE = 2.0 V, IC = 100 mA
135
400
2SD1615A
DC Current Gain
hFE2
81
270
VCE = 2.0 V, IC = 1.0 A
Collector Saturation Voltage
VCE(sat)
0.15
0.3
V
IC = 1.0 A, IB = 50 mA
Base Saturation Voltage
VBE(sat)
0.9
1.2
V
IC = 1.0 A, IB = 50 mA
Base to Emitter Voltage
VBE
600
700
mV
VCE = 2.0 V, IC = 50 mA
Gain Bandwidth Product
fT
80
160
MHz
VCE = 2.0 V, IE =
100 mA
Output Capacitance
Cob
19
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2 %
hFE Classification
MARKING
2SD1615
GM
GL
GK
2SD1615A
GQ
GP
hFE1
135 to 270
200 to 400
300 to 600
PACKAGE DIMENSIONS
in millimeters
C
EB
4.5
±0.1
1.6
±0.2
0.42
±0.06
0.42
±0.06
1.5
±0.1
2.5
±0.1
0.8
MIN.
4.0
±0.25
1.5
3.0
0.41
+0.03
0.05
E. Emitter
C. Collector
B. Base
0.47
±0.06
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1615GL | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1616AG-Y-AB3-R | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1616G-G-AB3-R | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1616G-G-T92-K | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD1616G-G-T92-B | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1615A-GP-T1-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Tape & Reel 制造商:Renesas 功能描述:0 |
| 2SD1615A-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,1.0A,P-MINIMOLD3 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SD1615A-T1-AZ(GP) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615A-T1-AZ(GQ) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Bulk 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) Power Mini-Mold |
發布緊急采購，3分鐘左右您將得到回復。