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參數資料
| 型號： | 2SD1624U |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 442K |
| 代理商： | 2SD1624U |
2SD1624
NPN Epitaxial
Planar Silicon
Transistors
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
3.0
A
ICP
Collector Current (Pulse)
6.0
A
PC
Collector dissipation
500
mW
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
60
---
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc)
50
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=40Vdc,IE=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
1.0
mAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=100mAdc, VCE=2.0Vdc)
100
---
560
---
hFE-2
DC Current Gain
(IC=3.0Adc, VCE=2.0Vdc)
35
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=10mAdc)
---
0.35
0.19
0.7
0.5
Vdc
VBE(SAT)
Base-Emitter Saturation Voltage
(IC=2.0Adc,IB=100mAdc)
---
0.94
1.2
Vdc
fT
Gain-Bandwidth product
(VCE=10V, IC=50mA )
---
150
---
MHz
Cob
Out Capacitance
(VCB=10V, f=1.0MHz)
---
25
---
pF
ton
Turn-on Time
---
70
---
ns
Tstg
Storage Time
---
650
---
ns
tf
Fall Time
IC=1.0Adc
IB1=IB2=0.1Adc
---
35
----
ns
hFE[1] CLASSIFICATION
Rank
R
S
T
U
Range
100-200
140-280
200-400
280-560