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參數資料
| 型號： | 2SD1684-S |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-126ML, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SD1684-S |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
100V/1.5A Switching Applications
Ordering number:ENN2041B
2SB1144/2SD1684
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/92098HA (KT)/10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041–1/5
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( ) : 2SB1144
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
Features
Adoption of FBET and MBIT processes.
High breakdown voltage.
Large current capacity.
Low saturation voltage.
Plastic-covered heat sink facilitating high-density
mounting.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25C
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* : The 2SB1144/2SD1684 are classified by 100mA hFE as follows :
Continued on next page.
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23
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1684T | 制造商:SANYO 功能描述:mom 100V 1.5A 200 to 400 TO-126ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 100V 1.5A TO-126 |
| 2SD1685F | 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1685G | 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1691-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 60V 5A 3-Pin TO-126 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Power Transistor, 60V, 5.0A, TO-126 |
| 2SD1691-AZ(L) | 制造商:Renesas Electronics Corporation 功能描述: |
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