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參數(shù)資料
型號: 2SD1692
元件分類: 功率晶體管
英文描述: 3 A, 100 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-126
封裝: TO-126, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 98K
代理商: 2SD1692
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confirm that this is the latest version.
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Document No. D16191EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
DATA SHEET
2002
FEATURES
High DC current gain due to Darlington connection
Large current capacity and low VCE(sat)
Large power dissipation TO-126 type power transistor
Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±3.0
A
Collector current (pulse)
IC(pulse)*
±5.0
A
Total power dissipation
PT (Ta = 25
°C)
1.3
W
Total power dissipation
PT (Tc = 25
°C)
15
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
* PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH
100
V
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
A
Collector cutoff current
ICEO
VCE = 100 V, RBE =
1.0
mA
DC current gain
hFE1**
VCE = 2.0 V, IC = 1.5 A
2,000
20,000
DC current gain
hFE2**
VCE = 2.0 V, IC = 3.0 A
1,000
Collector saturation voltage
VCE(sat)**
IC = 1.5 A, IB = 1.5 mA
0.9
1.2
V
Base saturation voltage
VBE(sat)**
IC = 1.5 A, IB = 1.5 mA
1.5
2.0
V
Turn-on time
ton
0.5
s
Storage time
tstg
2.0
s
Fall time
tf
IC = 1.5 A
IB1 =
IB2 = 1.5 mA
RL = 27
, VCC 40 V
1.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 12,000
8,000 to 20,000
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