- 您現在的位置：買賣IC網 > PDF目錄33334 > 2SD1725T 4 A, 100 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SD1725T |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-126LP, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 53K |
| 代理商： | 2SD1725T |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Large Current Switching Applications
Ordering number:ENN2048B
2SB1168/2SD1725
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20701TS TA-3150, 3153/92098HA (KT)/4137KI/D176TA, TS No.2048–1/5
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
2
1
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
1
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
4
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
8
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
2
.
1W
0
2W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
Specifications
( ) : 2SB1168
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2043B
[2SB1168/2SD1725]
Features
Relay drivers, high-speed inverters, converters.
Features
Low collector-to-emitter saturation voltage.
High fT.
Excellent linearity of hFE.
Short switching time.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
C
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
1
)
–
(
=
E 0
=1
)
–
(A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
)
–
(A
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
5
)
–
(
=
C
A
5
.
0
)
–
(
=
*
0
7*
0
4
h E
F 2V E
C
I
,
V
5
)
–
(
=
C
A
3
)
–
(
=
0
4
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
0
1
)
–
(
=
C
A
5
.
0
)
–
(
=
)
0
3
1
(z
H
M
0
8
1z
H
M
* : The 2SB1168/2SD1725 are classified by 0.5A hFE as follows :
Continued on next page.
8.0
4.0
1.5
9.0
11.0
15.5
1.6
0.8
3.0
0.8
0.6
2.7
0.5
2.4
4.8
1.2
12
3
2.0
k
n
a
RQ
R
S
T
h E
F
0
4
1
o
t
0
70
0
2
o
t
0
10
8
2
o
t
0
4
10
0
4
o
t
0
2
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1169AO | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1169R | 1 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1169AQ | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1169AP | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1169O | 1 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1729 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS TRANS SC-651500V 3.5A 60W BCE |
| 2SD1732 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1733TL | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1733TLP | 功能描述:兩極晶體管 - BJT DVR NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1733TLQ | 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。