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參數資料
| 型號： | 2SD1753P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 167K |
| 代理商： | 2SD1753P |
1
Power Transistors
2SD1753
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q
High foward current transfer ratio hFE
q
Satisfactory linearity of foward current transfer ratio hFE
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
200
150
6
2.5
1
0.1
15
1.3
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
min
150
500
typ
25
max
100
2000
1
Unit
A
V
MHz
*h
FE Rank classification
Rank
Q
P
hFE
500 to 1200 800 to 2000
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
±0.3
7.0
±0.3
3.0
±0.2
3.5
±0.2
10.0
+0.3
–0.
0.8
±0.2
1.0
±0.2
4.6
±0.4
2
13
1.1
±0.1
0.75
±0.1
2.3
±0.2
0.85
±0.1
0.4
±0.1
7.0
±0.3
0.75
±0.1
2.3
±0.2
4.6
±0.4
1.1
±0.1
10.2
±0.3
7.2
±0.3
2.0
±0.2
0.9
±0.1
3.5
±0.2
2.5
±0.2
1.0
2.5
±0.2
3.0
±0.2
1.0
max.
123
0 to 0.15
2.5
0.5 max.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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