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參數資料
| 型號： | 2SD1772A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 1 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | 2SD1772A |
1
Power Transistors
2SD1772, 2SD1772A
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
Complementary to 2SB1192 and 2SB1192A
I
Features
G
Large collector power dissipation P
C
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
200
150
180
6
2
1
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1772
2SD1772A
2SD1772
2SD1772A
T
C
=25
°
C
Ta=25
°
C
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 5mA, I
B
= 0
I
E
= 0.5mA, I
C
= 0
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 300mA
V
CE
= 10V, I
C
= 300mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 100mA, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
180
6
60
50
typ
20
27
max
50
50
240
1
1
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
2SD1772
2SD1772A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1773 | 功能描述:TRANS NPN 120VCEO 8A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1774A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
| 2SD1776A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO220FA100V 2A 2W BCE |
| 2SD1776-P0 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1779-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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