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參數(shù)資料
型號: 2SD1803TTP
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號晶體管
英文描述: 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: TP, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 100K
代理商: 2SD1803TTP
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Ordering number:ENN2085B
2SB1203/2SD1803
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No.2085—1/5
Package Dimensions
unit:mm
2045B
[2SB1203/2SD1803]
Applications
Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
Low collector-to-emitter saturation voltage.
High current and high fT.
Excellent linearity of hFE.
Fast switching speed.
Small and slim package making it easy to make
2SB1203/2SD1803-applied sets smaller.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1203/2SD1803]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
相關(guān)PDF資料
PDF描述
2SD1803RTP 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SB1203RTP 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1205S 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1205T 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1205S 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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2SD1805F-E 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1805F-TL-E 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1805G-E 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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