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參數資料
| 型號： | 2SD1843 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管（達林頓接線）低頻功率放大器和低速開關 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 76K |
| 代理商： | 2SD1843 |
2002
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
High DC current gain due to Darlington connection
High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
* PW
≤
10 ms, duty cycle
≤
50%
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T(Ta = 25
°
C)
T
j
T
stg
Ratings
60
±
10
60
±
10
7.0
±
1.0
±
2.0
1.0
150
55 to +150
Unit
V
V
V
A
A
W
°
C
°
C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
* *Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
h
FE2
2000 to 5000
Symbol
I
CBO
I
EBO
h
FE2
**
h
FE2
**
V
CE(sat)
**
V
BE(sat)
**
t
ON
t
stg
t
f
Conditions
MIN.
TYP.
MAX.
0.5
1.0
″
Unit
μ
A
mA
V
CB
= 40 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 0.2 A
V
CE
= 2.0 V, I
C
= 0.5 A
I
C
= 0.5 A, I
B
= 0.5 mA
I
C
= 0.5 A, I
B
= 0.5 mA
I
C
= 0.5 A, R
L
= 100
I
B1
=
I
B2
= 0.1 mA, V
CC
= 50 V
1000
2000
30000
1.5
2.0
V
V
μ
s
μ
s
μ
s
0.5
1.0
1.0
L
K
4000 to 10000
8000 to 30000
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