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參數(shù)資料
| 型號： | 2SD1890Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220 FULL PACK, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 172K |
| 代理商： | 2SD1890Q |
1
Power Transistors
2SD1890
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1250
s Features
q
Optimum for 25W HiFi output
q
High foward current transfer ratio hFE: 5000 to 30000
q
Low collector to emitter saturation voltage VCE(sat): <2.5V
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
100
80
5
6
3
35
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 100V, IE = 0
VCE = 80V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 2A, IB = 2mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 2mA, IB2 = –2mA,
VCC = 50V
min
80
2000
5000
typ
20
3.5
2.5
0.6
max
100
30000
2.5
3.0
Unit
A
V
MHz
s
*h
FE2 Rank classification
Rank
Q
P
hFE2
5000 to 15000 8000 to 30000
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
B
E
C
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1897 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1898T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1898T100P | 功能描述:兩極晶體管 - BJT DVR NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1898T100Q | 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1898T100R | 功能描述:兩極晶體管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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