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參數資料
| 型號： | 2SD1898 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 586K |
| 代理商： | 2SD1898 |
2SD1898
NPN Silicon
Power Transistors
Features
High VCEO, VCEO=80V
High IC, IC=1.0A(DC)
Good hFElinearity
Maximum Ratings
Symbol
Rating
Value
Unit
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, DC
Pulse
(1)
1.0
2.0
A
PC
Collector Power Dissipation
(2)
0.5
2.0
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
VCEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc)
80
---
Vdc
VCBO
Collector-Base Breakdow n Voltage
(IC=50uAdc)
100
---
Vdc
VEBO
Emitter-Base Breakdown Voltage
(IE=50uAdc)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=80Vdc)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
1.0
uAdc
hFE
DC Current Transfer Ratio
(3)
(VCE=3.0Vdc, IC=0.5Adc)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC/IB=500mA/20mA)
---
0.15
0.4
Vdc
fT
Transition Frequency
(VCE=10Vdc, IE=50mAdc,
f=100MHz)
---
100
---
MHz
Cob
Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
20
---
pF
(1) Pw=20ms, duty=1/2
(2) When mounted on a 40x40x0.7mm ceramic board.
(3) Measured using pulse current