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參數(shù)資料
| 型號： | 2SD1938(F)S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 2SD1938(F)S |
Transistors
1
Publication date: August 2004
SJC00313AED
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
Low ON resistance R
on
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
25
V
Collector current
IC
300
mA
Peak collector current
ICP
500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 020
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 mA
0.6
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 25 V, I
C
= 0
0.1
A
Forward current transfer ratio *
1
hFE
VCE = 2 V, IC = 4 mA
500
2 500
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
0.1
V
Transition frequency
fT
VCB
= 6 V, I
E
= 4 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
7
pF
(Common base, input open circuited)
ON resistance *
2
Ron
1.0
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Ron Measuremet circuit
Rank
S
T
No rank
hFE
500 to 1 500
800 to 2 500
500 to 2 500
VV
1 k
Ron
=
VB
× 1000 ()
VA
V
B
f
= 1 kHz
V
= 0.3 V
VB
IB
= 1 mA
VA
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
Marking symbol: 3W
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Product of no-rank classification is not marked.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD1938FSL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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