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參數資料
型號: 2SD1979GT
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SMINI3-F2, 3 PIN
文件頁數: 1/3頁
文件大小: 281K
代理商: 2SD1979GT
Transistors
1
Publication date: May 2007
SJC00377AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1979G
Silicon NPN epitaxial planar type
For low frequency amplification
For muting
For DC-DC converter
■ Features
Low ON resistance R
on
High forward current transfer ratio h
FE
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
25
V
Collector current
IC
300
mA
Peak collector current
ICP
500
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Base-emitter voltage
VBE
VCE
= 2 V, I
C
= 4 mA
0.6
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 25 V, IC = 01
A
Forward current transfer ratio *
1
hFE
VCE = 2 V, IC = 4 mA
500
2 500
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
0.1
V
Transition frequency
fT
VCB = 6 V, IE = 4 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
4.5
pF
(Common base, input open circuited)
ON resistance *
2
Ron
1
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Ron Measuremet circuit
Rank
S
T
hFE
500 to 1 500
800 to 2 500
VV
1 k
Ron
=
VB
× 1000 ()
VA
V
B
f
= 1 kHz
V
= 0.3 V
VB
IB
= 5 mA
VA
■ Package
Code
SMini3-F2
Marking Symbol: 3W
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料
PDF描述
2SD1979GS 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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相關代理商/技術參數
參數描述
2SD1980TL 功能描述:達林頓晶體管 D-PAK;BCE NPN;DARL SMT RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2SD1980TLR 制造商:Rohm 功能描述:NPN_[g 100V 2A 1000`10000 DPak, SC63,TO252 Cut Tape
2SD1981-AE 制造商:SANYO 功能描述:NPN 80V 2A 1000 MP Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 100V 80A TO-226 制造商:Sanyo 功能描述:0
2SD1984 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92MOD 30V 1A .9W ECB
2SD1987 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 60V 4A 30W BCE
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