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參數資料
| 型號： | 2SD2012 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 702K |
| 代理商： | 2SD2012 |
2SD2012
NPN Silicon
Power Transistors
Features
High DC Current Gain: hFE(1) =100 (Min.)
Low Saturation Voltage: VCE(sat)=1.0V (Max.)
High Power Dissipation: PC=25W (TC=25
OC)
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
3.0
A
IB
Base Current
0.5
A
PC
Collector power dissipation
TA=25
OC
TC=25
OC
2.0
25
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
60
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc,IE=0)
---
100
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
100
uAdc
ON CHARACTERISTICS
hFE(1)
Forward Current Transfer ratio
(IC=0.5Adc, VCE=5.0Vdc)
100
---
320
---
hFE(2)
Forward Current Transfer ratio
(IC=2.0Adc, VCE=5.0Vdc)
20
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.2Adc)
---
0.4
1.0
Vdc
VBE
Base-Emitter Saturation Voltage
(IC=0.5Adc, VCE=5.0Vdc)
---
0.75
1.0
Vdc
fT
Transition Frequency
(VCE=5.0Vdc, IC=0.5Adc)
---
3.0
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
35
---
pF
omponents
20736 Marilla Street Chatsworth
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MCC
A
N
M
P
Q H
J
B
D
C
E
F
K
G
1 2
3
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
Revision: 3
2006/05/18
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.382
.406
9.70
10.30
B
.118
.134
3.00
3.40
Φ
C
.118
3.00
D
.579
.602
14.70
15.30
E
.512
---
13.00
---
F
---
.220
---
5.60
G
.090
.110
2.29
2.79
H
.024
.035
0.60
0.90
J
.043
1.10
K
.154
3.90
M
.169
.185
4.30
4.70
N
.098
.114
2.50
2.90
P
.102
2.60
Q
.024
.035
0.60
0.90
TO-220F
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2012(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SD2012(F,M) | 功能描述:兩極晶體管 - BJT NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2012,F(J | 制造商:Toshiba 功能描述:The same specification as 2SD2012(F) Bulk 制造商:Toshiba 功能描述:0 |
| 2SD2012_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NPN SILICON POWER TRANSISTOR |
| 2SD2012_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
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