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參數資料
| 型號： | 2SD2134 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | 2SD2134 |
1
Power Transistors
2SB1414
Silicon PNP epitaxial planar type
Publication date: February 2002
SJD00070BED
For low-frequency driver/high power amplification
Complementary to 2SD2134
■
Features
Excellent current I
C
characteristics of forward current transfer ratio
h
FE
vs. collector
High transition frequency f
T
Allowing automatic insertion with radial taping
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5
±
0.2
0.65
±
0.1
2
±
0
0.7
±
0.1
1.15
±
0.2
2.5
±
0.2
2.5
±
0.2
0.85
±
0.1
1.0
±
0.1
0.7
±
0.1
1.15
±
0.2
0.5
±
0.1
1
0.8 C
2
3
0.4
±
0.1
4.5
±
0.2
0.8 C
0.8 C
3
±
0
1
±
1
1
±
0
2
±
0
9
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
150
150
5
1
1.5
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
T
stg
1.5
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
μ
A, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
5 V, I
C
=
500 mA
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
150
5
V
Emiter-base voltage (Collector open)
Forward current transfer ratio
*1
V
EBO
h
FE1
*2
h
FE2
V
90
330
50
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
V
CE(sat)
0.5
1.0
2.0
2.0
V
V
BE(sat)
f
T
C
ob
V
Transition frequency
200
MHz
Collector output capacitance
(Common base, input open circuited)
30
pF
Rank
Q
R
S
h
FE1
90 to 155
130 to 220
185 to 330
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| 2SB1417A | Silicon PNP epitaxial planar type(For power amplification) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD21340RA | 功能描述:TRANS NPN 150VCEO 1A MT-3 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2134Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SD2134R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SD2134S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SD2135 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-221VAR |
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