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參數(shù)資料
| 型號： | 2SD2163L |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|叩| 100V的五（巴西）總裁| 10A條一（c）|至220 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | 2SD2163L |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
DATA SHEET
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
High DC current gain due to Darlington connection
h
FE
= 1,000 MIN. (@I
C
= 10 A)
Low collector saturation voltage:
V
CE(sat)
= 1.5 V MAX. (@I
C
= 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25
°
C)
P
T
(Ta = 25
°
C)
T
j
T
stg
Ratings
150
100
8.0
±
10
±
20
1.0
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°
C
°
C
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
PW
≤
10 ms, duty cycle
≤
50%
*
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
I
CBO
h
FE
**
V
CE(sat)
**
V
BE(sat)
**
t
on
t
stg
t
f
Conditions
MIN.
TYP.
MAX.
10
30,000
1.5
2.0
Unit
μ
A
Collector cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
** Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
V
CB
= 100 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 10 A
I
C
= 10 A, I
B
= 25 mA
I
C
= 10 A, I
B
= 25 mA
I
C
= 10 A, I
B1
=
I
B2
= 25 mA
R
L
= 5.0
, V
CC
50 V
Refer to the test circuit.
1,000
6,000
1.1
1.8
1.0
5.0
2.0
V
V
μ
s
μ
s
μ
s
h
FE
CLASSIFICATION
Marking
h
FE
M
L
K
J
1,000 to 3,000
2,000 to 5,000
4,000 to 10,000
8,000 to 30,000
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| 2SD2164L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SD2163M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2164 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2164-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2164K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
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