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參數(shù)資料
| 型號： | 2SD2165 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管（達林頓接線）低頻功率放大器和低速開關(guān) |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 118K |
| 代理商： | 2SD2165 |
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Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
c
2002
The mark shows major revised points.
The 2SD2165 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
1,300 TYP. (V
CE
= 5.0 V, I
C
= 1.0 A)
V
CE(SAT)
0.3 V TYP. (I
C
= 3.0 A, I
B
= 30 mA)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
6.0
A
Collector current (pulse)
I
C(pulse)
10
Note
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation (T
C
= 25
°
C)
P
T
30
W
Total power dissipation (T
A
= 25
°
C)
P
T
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Note
PW
≤
300
μ
s, duty cycle
≤
10%
PACKAGE DRAWING (UNIT: mm)
10.0 ±0.3
3.2 ±0.2
φ
2.7 ±0.2
1.3 ±0.2
1.5 ±0.2
0.7 ±0.1
2.54 TYP.
2.54 TYP.
1 2 3
4
1
1
1
3
4.5 ±0.2
2.5 ±0.1
0.65 ±0.1
Electrode Connection
1. Base
2. Collector
3. Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2165-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 100V 6A 3-Pin(3+Tab) TO-220 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,100V,6.0A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 100V 6A 3-Pin(3+Tab) TO-220 Isolated |
| 2SD2165AZ-K | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SD2165K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR |
| 2SD2165L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR |
| 2SD2165-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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