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| 型號： | 2SD2203-S |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220ML, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | 2SD2203-S |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
80V/7A High-Current Switching Applications
Ordering number:ENN3250
2SB1455/2SD2203
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42804TN (PC)/N1098HA (KT)/5111MH (KOTO) No.3250–1/4
Package Dimensions
unit:mm
2041A
[2SB1455/2SD2203]
Features
Low collector-to-emitter saturation voltage.
Large current capacity.
Micaless package facilitating easy mounting.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
( ) : 2SB1455
Specifications
Absolute Maximum Ratings at Ta = 25C
* : The 2SB1455/2SD2203 are classified by 1A hFE as follows :
Continued on next page.
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| 2SD2204 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITHCING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) |
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| 2SD2206(T6CANO,F,M | 功能描述:TRANS NPN 2A 100V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 1mA，1A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:2000 @ 1A，2V 功率 - 最大值:900mW 頻率 - 躍遷:100MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長體 供應商器件封裝:TO-92MOD 標準包裝:1 |
| 2SD2206(T6CNO,A,F) | 功能描述:TRANS NPN 2A 100V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 1mA，1A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:2000 @ 1A，2V 功率 - 最大值:900mW 頻率 - 躍遷:100MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長體 供應商器件封裝:TO-92MOD 標準包裝:1 |
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