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參數資料
| 型號： | 2SD2266P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT4, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 189K |
| 代理商： | 2SD2266P |
Power Transistors
1
2SD2266
Silicon NPN triple diffusion planar type
For power switching
I Features
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Allowing supply with the radial taping
I Absolute Maximum Ratings T
C = 25°C
1: Base
2: Collector
3: Emitter
MT-4 (MT4 Type Package)
Unit: mm
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7V
Peak collector current
ICP
8A
Collector current
IC
4A
Base current
IB
1A
Collector power
TC = 25
°CP
C
15
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 80 V, IE = 0
100
A
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
100
A
Collector to emitter voltage
VCEO
IC = 25 mA, IB = 0
60
V
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
320
hFE2
VCE = 4 V, IC = 4 A
20
Base to emitter voltage
VBE
VCE = 4 V, IC = 4 A
2.0
V
Collector to emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 0.4 A
1.5
V
Transition frequency
fT
VCE = 12 V, IC = 0.2 A, f = 10 MHz
80
MHz
Turn-on time
ton
IC = 4 A, IB1 = 0.4 A, IB2 =
0.4 A,
0.3
s
Storage time
tstg
VCC = 50 V
1.0
s
Fall time
tf
0.2
s
Note) *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250
160 to 320
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder
Dip
5.0±0.1
2.5
±0.1
90
1.0±0.2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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