- 您現在的位置：買賣IC網 > PDF目錄369165 > 2SD2275P TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR PDF資料下載
參數資料
| 型號： | 2SD2275P |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 中文描述： | 晶體管|晶體管|達林頓|叩| 100V的五（巴西）總裁| 5A條一（c）|至247VAR |
| 文件頁數： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | 2SD2275P |
1
Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
For power amplification and switching
I
Features
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
±
15
100
±
15
5
8
4
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*1
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b*2
Conditions
V
CB
= 85V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 5mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
I
C
= 3A, I
B
= 12mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
I
C
= 1A, L = 100mH, R
BE
= 100
min
85
1000
1000
typ
20
50
max
100
2
115
10000
2
4
2.5
0.3
3.0
1.0
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
mJ
*1
h
FE2
Rank classification
Rank
Q
P
h
FE2
1000 to 5000
2000 to 10000
T
C
=25
°
C
Ta=25
°
C
L coil
I
C
I
B1
V
in
t
W
–I
B2
Vclamp
V
CC
T.U.T
*2
E
s/b
Test circuit
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
–
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD2275Q | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275S | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2276P | TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SD2276Q | TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SD2276S | TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2275Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2276 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SD2276P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SD2276Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR |
發布緊急采購，3分鐘左右您將得到回復。