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參數資料
型號: 2SD2321
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency power amplification)
中文描述: 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, NS-B1, 3 PIN
文件頁數: 1/2頁
文件大小: 39K
代理商: 2SD2321
1
Transistor
2SD2321
Silicon NPN epitaxial planer type
For low-frequency power amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Ratings
40
20
7
5
8
400
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
20
7
230
150
typ
0.28
150
26
max
0.1
1.0
0.1
600
1.0
50
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
230 ~ 380
340 ~ 600
*2
Pulse measurement
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2SD2324 Compact Motor Driver Applications
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2SD2331 TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)
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相關代理商/技術參數
參數描述
2SD23210RA 功能描述:TRANS NPN 20VCEO 5A NS-B1 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD2329 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD234 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 60V 3A 25W BCE
2SD2342 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3P150V 6A 50W BCE
2SD2343 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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